Blar i SINTEF Open på forfatter "Mehta, Bodh R."

Viser treff 1-3 av 3

    • Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity 

      Kaushik, Vishakha; Ahmad, Mujeeb; Khushboo, Agarwal; Varandani, Deepak; Belle, Branson; Das, Pintu; Mehta, Bodh R. (Peer reviewed; Journal article, 2020)
      Electrical and optical characteristics of few-layered (3–4 L) chemical vapor deposition (CVD) grown MoS2, WS2, and MoS2–WS2 heterostructure-based back-gated field-effect transistor (FET) devices have herein been studied. ...

    • Direct Observation of Charge Transfer between NOx and Monolayer MoS2 by Operando Scanning Photoelectron Microscopy 

      Jensen, Ingvild Julie Thue; Ali, Ayaz; Zeller, Patrick; Amati, Matteo; Schrade, Matthias; Vullum, Per Erik; Benthem, Marta; Bisht, Prashant; Taniguchi, Takashi; Watanabe, Kenji; Mehta, Bodh R.; Gregoratti, Luca; Belle, Branson (Peer reviewed; Journal article, 2021)
      Atomically thin transition-metal dichalcogenides (MoS2, WSe2, etc.) have long been touted as promising materials for gas detection because of their tunable band gaps; however, the sensing mechanism, based on a charge-transfer ...

    • Single digit parts-per-billion NOx detection using MoS2/hBN transistors 

      Ali, Ayaz; Koybasi, Ozhan; Xing, Wen; Wright, Daniel Nilsen; Varandani, Deepak; Taniguchi, Takashi; Watanabe, Kenji; Mehta, Bodh R.; Belle, Branson (Peer reviewed; Journal article, 2020)
      2D materials offer excellent possibilities for high performance gas detection due to their high surface-to-volume ratio, high surface activities, tunable electronic properties and dramatic change in resistivity upon molecular ...